BSZ011NE2LS5IATMA1 vs IPD082N10N3GATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and IPD082N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveInfineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $1.14 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) at TA=25Β°C | 35 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΞ© (typical, per datasheet title) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 69 W | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | β |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| Part Number | β | IPD082N10N3GATMA1 |
| Manufacturer | β | Infineon Technologies |
| Continuous Drain Current (ID) @ Tc=25Β°C | β | 80 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | β | 8.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 125 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Package / Case | β | PG-TO252-3 (DPAK), surface mount |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | β | Not applicable (industrial/consumer grade) |