BSZ017NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8

BSZ017NE2LS5IATMA1 βœ“ Active
Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ017NE2LS5IATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.64 $0.42
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (TA) 27 A β€”
Continuous Drain Current (TC) 40 A β€”
On-Resistance RDS(on) @ VGS=10V 1.7 mΞ© β€”
On-Resistance Test Current 20 A β€”
Gate-Source Voltage (VGS) Rating Β±16 V β€”
Gate Threshold Voltage VGS(th) 2 V @ 250 Β΅A β€”
Total Gate Charge Qg 30 nC @ VGS=10V β€”
Input Capacitance Ciss 2000 pF @ VDS=12V β€”
Power Dissipation (TA) 2.1 W β€”
Power Dissipation (TC) 50 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Package PG-TSDSON-8-FL (8-PowerTDFN) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Series / Family OptiMOS 5 25V β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 25V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 16 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
Power Dissipation (PD) at TA=25C β€” 2.1 W
Power Dissipation (PD) at TC=25C β€” 37 W
Configuration β€” Single
Operating Temperature Range β€” -55C to +150C
MSL Level β€” 1 (Unlimited)
Lead-Free β€” Yes
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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