BSZ017NE2LS5IATMA1 vs IPB027N10N3GATMA1 Comparison
Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
BSZ017NE2LS5IATMA1 ✓ Active
Specification Comparison
| Parameter | BSZ017NE2LS5IATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.64 | $1.62 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (TA) | 27 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ | — |
| On-Resistance Test Current | 20 A | — |
| Gate-Source Voltage (VGS) Rating | ±16 V | — |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA | — |
| Total Gate Charge Qg | 30 nC @ VGS=10V | — |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 50 W | — |
| Operating Junction Temperature | -55°C to +150°C | — |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | — |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 3 (Trench MOSFET) |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Operating Temperature Range | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |