BSZ017NE2LS5IATMA1 vs ISC110N12NM6ATMA1 Comparison
Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β Active
Specification Comparison
| Parameter | BSZ017NE2LS5IATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.64 | $0.51 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 25 V | 120 V |
| Continuous Drain Current (TA) | 27 A | β |
| Continuous Drain Current (TC) | 40 A | β |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΞ© | β |
| On-Resistance Test Current | 20 A | β |
| Gate-Source Voltage (VGS) Rating | Β±16 V | β |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 Β΅A | β |
| Total Gate Charge Qg | 30 nC @ VGS=10V | β |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | β |
| Power Dissipation (TA) | 2.1 W | β |
| Power Dissipation (TC) | 50 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | β |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at Ta | β | 11 A |
| Continuous Drain Current (ID) at Tc | β | 62 A |
| On-Resistance RDS(on) max at VGS=10V | β | 9.8 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.1 V |
| Total Gate Charge (Qg) | β | 15.4 nC |
| Input Capacitance (Ciss) | β | 1.1 nF |
| Output Capacitance (Coss) | β | 330 pF |
| Reverse Transfer Capacitance (Crss) | β | 10 pF |
| Power Dissipation (Pd) at Tc | β | 94 W |
| Power Dissipation (Pd) at Ta | β | 3 W |
| Avalanche Energy (EAS) | β | 185 mJ |