BSZ018NE2LSATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ018NE2LSATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 βœ“ Active
Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ018NE2LSATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V OptiMOS 25V
Technology N-Channel Trench MOSFET β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (TA) 23 A β€”
Continuous Drain Current (TC) 40 A β€”
Power Dissipation (TA) 2.1 W β€”
Power Dissipation (TC) 69 W β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) typical at VGS=10V] β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] β€”
Gate Charge Qg [DATA_NEEDED: total gate charge at VGS=10V] β€”
Operating Temperature Range -55C to +150C -55C to +150C
Package PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] 1 (Unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Halogen-Free Yes β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 16 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
Power Dissipation (PD) at TA=25C β€” 2.1 W
Power Dissipation (PD) at TC=25C β€” 37 W
Configuration β€” Single
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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