BSZ018NE2LSIATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveInfineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ018NE2LSIATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | 160 A | β |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (TJ) |
| Package | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS (Trench) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Configuration | β | Single N-Channel |
| Pin Count | β | 8 |
| Gate Drive | β | Logic-level compatible |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |