BSZ018NE2LSIATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon

BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon

BSZ018NE2LSIATMA1 βœ“ Active
Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ018NE2LSIATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta=25C 22 A β€”
Continuous Drain Current (ID) at Tc=25C 40 A β€”
Pulsed Drain Current (IDM) 160 A β€”
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation at Ta=25C 2.1 W β€”
Power Dissipation at Tc=25C 69 W β€”
Operating Temperature Range -55 C to +150 C -55C to +150C
Package PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Product Family β€” OptiMOS 25V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 16 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
Power Dissipation (PD) at TA=25C β€” 2.1 W
Power Dissipation (PD) at TC=25C β€” 37 W
Configuration β€” Single
MSL Level β€” 1 (Unlimited)
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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