BSZ024N04LS6ATMA1 vs BSZ070N08LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and BSZ070N08LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.78 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (shielded-gate trench) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | β |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55 Β°C to +150 Β°C |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, unleaded reflow) |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOSβ’ 5 (80 V logic-level) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TC | β | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | β | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | β | 7 mΞ© |
| On-Resistance RDS(on) @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | β | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | β | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | β | 69 W |
| Avalanche Rated | β | Yes |
| Reel Quantity | β | 5000 per 13-inch reel (T&R) |