BSZ024N04LS6ATMA1 vs IAUC60N04S6N031HATMA1 Comparison

Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and IAUC60N04S6N031HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 βœ“ Active
Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 βœ“ Active

Specification Comparison

Parameter BSZ024N04LS6ATMA1 IAUC60N04S6N031HATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.95
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 6 (shielded-gate trench) β€”
Drain-Source Voltage (V_DS) 40 V 40 V
Continuous Drain Current (I_D, Ta) 24 A β€”
Continuous Drain Current (I_D, Tc) 40 A β€”
Pulsed Drain Current (I_DM) 130 A β€”
R_DS(on) Max @ V_GS=10V 2.4 mΞ© β€”
R_DS(on) Max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at 4.5V] β€”
Gate Threshold Voltage (V_GS(th)) 2.3 V (typical) β€”
Total Gate Charge (Q_g) @ V_GS=10V 25 nC β€”
Input Capacitance (C_iss) 1.8 nF β€”
Output Capacitance (C_oss) 19 pF β€”
Power Dissipation (P_D, Ta) 2.5 W β€”
Power Dissipation (P_D, Tc) 75 W β€”
Operating Junction Temperature -55Β°C to +175Β°C β€”
Package PG-TSDSON-8-FL (3.3 mm x 3.3 mm) PG-TDSON-8-56 (5 mm x 6 mm)
Mounting Type Surface Mount, top-side drain pad Surface Mount
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Manufacturer β€” Infineon Technologies
Part Family β€” IAUC (Integrated Automotive Half-Bridge)
Process Technology β€” OptiMOS 6 40V
Configuration β€” Half-Bridge (2 N-Channel MOSFETs)
Continuous Drain Current (I_D, Tj) β€” 60 A
Power Dissipation (P_D, Tc=25C) β€” 75 W
R_DS(on) at VGS=10V β€” 3.1 mΞ©
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Operating Temperature Range β€” -55 Β°C to +175 Β°C (Tj)
Pin Count β€” 8
Automotive Qualification β€” AEC-Q101

Datasheets & Resources

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