BSZ024N04LS6ATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.98 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |