BSZ024N04LS6ATMA1 vs IQD005N04NM6CGATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and IQD005N04NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6CGATMA1
IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $1.62 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS 6 (trench FET) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | β |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | β | 0.5 mΞ© |
| Continuous Drain Current (ID) at Ta | β | 58 A |
| Continuous Drain Current (ID) at Tc | β | 610 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 333 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (TJ) |
| Pin Count | β | 9 |
| Lead-Free | β | Yes |
| Source Configuration | β | Source-Down (bottom-side source for PCB heatsinking) |