BSZ024N04LS6ATMA1 vs ISC058N04NM5ATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.60 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | β |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 40V Normal Level |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 63 A |
| Continuous Drain Current (ID, Ta=25C) | β | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | β | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.4 V |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 42 W |
| Operating Temperature Range | β | -55C to +175C |
| RoHS Compliance | β | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | β | MSL per JEDEC J-STD-020 |
| Gate Drive Level | β | Normal Level (10V VGS recommended) |