BSZ031NE2LS5ATMA1 vs BSO220N03MDGXUMA1 Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and BSO220N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | β |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Series | β | OptiMOSβ’ 3M |
| Configuration | β | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | β | 30 V |
| Continuous Drain Current (I_D) | β | 7.7 A |
| On-State Resistance (R_DS(on)) | β | 22 mΞ© max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | β | 1.4 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Technology | β | OptiMOSβ’ 3M (Trench MOSFET) |
| Avalanche Rated | β | Yes |