BSZ031NE2LS5ATMA1 vs BSZ0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveInfineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | BSZ0501NSIATMA1 |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Product Family | β | OptiMOS 5 (25V/30V) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) at TA=25C | β | 25 A |
| Continuous Drain Current (Id) at TC=25C | β | 40 A |
| Power Dissipation (Pd) at TA=25C | β | 2.1 W |
| Power Dissipation (Pd) at TC=25C | β | 50 W |
| Operating Mode | β | Enhancement Mode |
| Configuration | β | Single with built-in diode |
| Number of Terminals | β | 8 |
| JESD-609 Code | β | e3 (matte tin) |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Operating Temperature Range | β | [DATA_NEEDED: Tj max] |