BSZ036NE2LSATMA1 vs BSC034N06NSATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSC034N06NSATMA1

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.65
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A 100 A
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C -55C to +150C
MSL Level 1 (Unlimited) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
Polarity β€” N-Channel
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 74 W
Technology β€” OptiMOS 5

Datasheets & Resources

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