BSZ036NE2LSATMA1 vs BSC050NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSC050NE2LSATMA1

BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon

BSC050NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSC050NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.36
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C -55C to +150C
MSL Level 1 (Unlimited) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
FET Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 25 V
Continuous Drain Current (I_D) at Tc=25C β€” 58 A
Continuous Drain Current (I_D) at Ta=25C β€” 39 A
R_DS(on) max at V_GS=10V β€” 5 mOhm
R_DS(on) typical at V_GS=10V β€” 4.2 mOhm
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 28 W
Technology β€” OptiMOS 25V (trench)

Datasheets & Resources

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