BSZ036NE2LSATMA1 vs BSZ011NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSZ011NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.55
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C -55Β°C to +150Β°C
MSL Level 1 (Unlimited) MSL1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Gate Drive Logic-level compatible β€”
FET Type β€” N-Channel
Technology β€” OptiMOS 5 (Trench)
Continuous Drain Current (ID) at TA=25Β°C β€” 35 A
Continuous Drain Current (ID) at TC=25Β°C β€” 40 A
On-State Resistance RDS(on) max at VGS=10 V β€” 1.1 mΞ© (typical, per datasheet title)
Power Dissipation at TA=25Β°C β€” 2.1 W
Power Dissipation at TC=25Β°C β€” 69 W
Gate Threshold Voltage VGS(th) β€” 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) β€” 4.5 V to 10 V
Halogen-Free β€” Yes

Datasheets & Resources

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