BSZ036NE2LSATMA1 vs BSZ017NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8

BSZ017NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSZ017NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.64
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8-FL (8-PowerTDFN)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C β€”
MSL Level 1 (Unlimited) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
Polarity β€” N-Channel
Continuous Drain Current (TA) β€” 27 A
Continuous Drain Current (TC) β€” 40 A
On-Resistance RDS(on) @ VGS=10V β€” 1.7 mΞ©
On-Resistance Test Current β€” 20 A
Gate-Source Voltage (VGS) Rating β€” Β±16 V
Gate Threshold Voltage VGS(th) β€” 2 V @ 250 Β΅A
Total Gate Charge Qg β€” 30 nC @ VGS=10V
Input Capacitance Ciss β€” 2000 pF @ VDS=12V
Power Dissipation (TA) β€” 2.1 W
Power Dissipation (TC) β€” 50 W
Operating Junction Temperature β€” -55Β°C to +150Β°C
Series / Family β€” OptiMOS 5 25V

Datasheets & Resources

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