BSZ036NE2LSATMA1 vs BSZ018NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ036NE2LSATMA1
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 β Active
Specification Comparison
| Parameter | BSZ036NE2LSATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | OptiMOS 25V |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| Power Dissipation (PD) at TA=25C | 2.1 W | β |
| Power Dissipation (PD) at TC=25C | 37 W | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | β |
| Technology | β | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | β | 23 A |
| Continuous Drain Current (TC) | β | 40 A |
| Power Dissipation (TA) | β | 2.1 W |
| Power Dissipation (TC) | β | 69 W |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | β | [DATA_NEEDED: total gate charge at VGS=10V] |
| Halogen-Free | β | Yes |