BSZ036NE2LSATMA1 vs BSZ065N03LSATMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active
Infineon
BSZ065N03LSATMA1

BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSZ065N03LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (ID) at TA=25C 16 A 12 A
Continuous Drain Current (ID) at TC=25C 40 A 40 A
Power Dissipation (PD) at TA=25C 2.1 W 2.1 W
Power Dissipation (PD) at TC=25C 37 W 26 W
Package PG-TSDSON-8-FL (5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
Configuration Single Single N-Channel
Operating Temperature Range -55C to +150C -55C to +150C (junction)
MSL Level 1 (Unlimited) 1
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
Series β€” OptiMOS 30V
Transistor Type β€” N-Channel MOSFET
Package / Case β€” PG-TSDSON-8-FL (S308)
Technology β€” Trench MOSFET (OptiMOS)
Gate Drive (typical) β€” 4.5 V

Datasheets & Resources

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