BSZ036NE2LSATMA1 vs BSZ065N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ065N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | BSZ036NE2LSATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA=25C | 16 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| Power Dissipation (PD) at TA=25C | 2.1 W | β |
| Power Dissipation (PD) at TC=25C | 37 W | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +150C | -55Β°C to +150Β°C |
| MSL Level | 1 (Unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Gate Drive | Logic-level compatible | β |
| Series | β | OptiMOSβ’ 5 |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOSβ’ 5 logic-level |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| Continuous Drain Current (ID) Max | β | 65 A |
| Drain Current @ Tc (ID, Tc=25Β°C) | β | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6.5 mΞ© |
| Power Dissipation (PD) Max | β | 46 W |
| Gate Threshold Voltage (VGS(th)) | β | 2.3 V |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | β | 1.8 nF |