BSZ0501NSIATMA1 vs BSZ017NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSZ0501NSIATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveInfineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0501NSIATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $0.64 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ0501NSIATMA1 | β |
| Product Family | OptiMOS 5 (25V/30V) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) at TA=25C | 25 A | β |
| Continuous Drain Current (Id) at TC=25C | 40 A | β |
| Power Dissipation (Pd) at TA=25C | 2.1 W | β |
| Power Dissipation (Pd) at TC=25C | 50 W | β |
| Operating Mode | Enhancement Mode | β |
| Configuration | Single with built-in diode | β |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 8 | β |
| JESD-609 Code | e3 (matte tin) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (TA) | β | 27 A |
| Continuous Drain Current (TC) | β | 40 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.7 mΞ© |
| On-Resistance Test Current | β | 20 A |
| Gate-Source Voltage (VGS) Rating | β | Β±16 V |
| Gate Threshold Voltage VGS(th) | β | 2 V @ 250 Β΅A |
| Total Gate Charge Qg | β | 30 nC @ VGS=10V |
| Input Capacitance Ciss | β | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | β | 2.1 W |
| Power Dissipation (TC) | β | 50 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Series / Family | β | OptiMOS 5 25V |