BSZ065N03LSATMA1 vs BSC050N03LSGATMA1 Comparison

Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N03LSATMA1

BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 βœ“ Active
Infineon
BSC050N03LSGATMA1

BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon

BSC050N03LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSZ065N03LSATMA1 BSC050N03LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.36
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 30V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 12 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 26 W β€”
Package / Case PG-TSDSON-8-FL (S308) β€”
Mounting Type Surface Mount Surface Mount
Configuration Single N-Channel β€”
Technology Trench MOSFET (OptiMOS) OptiMOS 3 (N-channel trench MOSFET)
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C
MSL Level 1 1
RoHS Status Compliant Compliant
Gate Drive (typical) 4.5 V β€”
Part Number β€” BSC050N03LSGATMA1
Drain-Source Voltage (VDS) Max β€” 30 V
Continuous Drain Current (ID) at Tc β€” 80 A
Continuous Drain Current (ID) at Ta β€” 18 A
On-State Resistance (RDS(on)) Max at VGS=10V β€” 5 mOhm
Power Dissipation (PD) at Tc β€” 50 W
Power Dissipation (PD) at Ta β€” 2.5 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Package β€” PG-TDSON-8-5 (SuperSO8 5x6 mm)
Channel Type β€” N-Channel

Datasheets & Resources

Browse All Products Create BOM Request Quote