BSZ065N03LSATMA1 vs BSZ070N08LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and BSZ070N08LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ065N03LSATMA1
BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon
BSZ065N03LSATMA1 β ActiveInfineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ065N03LSATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 12 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| Power Dissipation (PD) at TA=25C | 2.1 W | β |
| Power Dissipation (PD) at TC=25C | 26 W | β |
| Package / Case | PG-TSDSON-8-FL (S308) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | β |
| Technology | Trench MOSFET (OptiMOS) | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, unleaded reflow) |
| RoHS Status | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | β |
| Part Family | β | OptiMOSβ’ 5 (80 V logic-level) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TC | β | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | β | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | β | 7 mΞ© |
| On-Resistance RDS(on) @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | β | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | β | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | β | 69 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Package | β | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Avalanche Rated | β | Yes |
| Reel Quantity | β | 5000 per 13-inch reel (T&R) |