BSZ065N03LSATMA1 vs IQDH35N03LM5CGATMA1 Comparison

Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and IQDH35N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N03LSATMA1

BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 βœ“ Active
Infineon
IQDH35N03LM5CGATMA1

IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΞ© N-Channel MOSFET | Infineon

IQDH35N03LM5CGATMA1 βœ“ Active

Specification Comparison

Parameter BSZ065N03LSATMA1 IQDH35N03LM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $1.45
Manufacturer Infineon Technologies β€”
Series OptiMOS 30V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25C 12 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 26 W β€”
Package / Case PG-TSDSON-8-FL (S308) β€”
Mounting Type Surface Mount Surface Mount
Configuration Single N-Channel β€”
Technology Trench MOSFET (OptiMOS) OptiMOS 5 trench MOSFET
Operating Temperature Range -55C to +150C (junction) -55 Β°C to +175 Β°C
MSL Level 1 1
RoHS Status Compliant Compliant
Gate Drive (typical) 4.5 V β€”
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at Ta β€” 66 A
Pulsed Drain Current (IDM) at Tc β€” 700 A
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Static Drain-to-Source On-Resistance (RDS(on)) β€” 0.35 mΞ© (typical at VGS=10 V)
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 278 W
Package β€” PG-TTFN-9-U02 (PQFN 5x6 mmΒ²)
Halogen-Free β€” Yes
Channel Type β€” N-Channel

Datasheets & Resources

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