BSZ065N06LS5ATMA1 vs IPD380P06NMATMA1 Comparison

Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and IPD380P06NMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 βœ“ Active
Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 βœ“ Active

Specification Comparison

Parameter BSZ065N06LS5ATMA1 IPD380P06NMATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.49
Manufacturer Infineon Technologies β€”
Series OptiMOSβ„’ 5 β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOSβ„’ 5 logic-level OptiMOS P-channel trench
Drain-Source Voltage (VDS) Max 60 V β€”
Continuous Drain Current (ID) Max 65 A β€”
Drain Current @ Tc (ID, Tc=25Β°C) 40 A β€”
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΞ© β€”
Power Dissipation (PD) Max 46 W β€”
Gate Threshold Voltage (VGS(th)) 2.3 V β€”
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V β€”
Input Capacitance (Ciss) 1.8 nF β€”
Operating Temperature Range -55Β°C to +150Β°C -55 C to +150 C (junction)
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TO252-3 (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage V(BR)DSS β€” 60 V
Continuous Drain Current (Tc=25 C) β€” 35 A
Power Dissipation (Tc) β€” 125 W
Gate Drive β€” Logic-level compatible
Avalanche Rated β€” Yes (per manufacturer datasheet)
MSL Level β€” 1
Target Applications β€” Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free β€” Yes
Automotive Qualified β€” Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

Datasheets & Resources

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