BSZ070N08LS5ATMA1 vs BSZ096N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ070N08LS5ATMA1 by Infineon and BSZ096N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ070N08LS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOSβ’ 5 (80 V logic-level) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | β |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΞ© | β |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | Logic-level (low single-volt range) |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| Power Dissition PD max at TC | 69 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020, unleaded reflow) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Reel Quantity | 5000 per 13-inch reel (T&R) | β |
| Product Family | β | OptiMOS 5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 100 V |
| Gate-Source Voltage (VGS max) | β | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 Β°C) | β | 40 A |
| Maximum Silicon Drain Current (ID max) | β | 62 A |
| Pulse Drain Current (ID,pulse) | β | 160 A |
| On-Resistance RDS(on) max | β | 9.6 mΞ© at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 Β°C) | β | 69 W |
| Diode Continuous Forward Current (IS) | β | 40 A (TC=25 Β°C) |
| Diode Forward Voltage (VSD) | β | 0.85 V typ, 1.2 V max at IF=20 A |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (junction) |
| Technology | β | OptiMOS 5 trench MOSFET |
| Gate Drive | β | Logic-level compatible |
| ESD Protection | β | Yes (gate-integrated) |
| Packaging Code | β | ATMA1 (tape and reel) |