BSZ070N08LS5ATMA1 vs IAUC100N04S6L020ATMA1 Comparison
Detailed side-by-side comparison of BSZ070N08LS5ATMA1 by Infineon and IAUC100N04S6L020ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveInfineon
IAUC100N04S6L020ATMA1
IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ070N08LS5ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.86 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOSβ’ 5 (80 V logic-level) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | β |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΞ© | β |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| Power Dissition PD max at TC | 69 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020, unleaded reflow) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Reel Quantity | 5000 per 13-inch reel (T&R) | β |
| FET Type | β | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | β | 40 V |
| Continuous Drain Current (Tc) | β | 100 A |
| Power Dissipation (Tc) | β | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | β | 2.04 mΞ© |
| RDS(on) Typical | β | 2.0 mΞ© |
| Gate-Source Voltage VGS (max) | β | Β±20 V |
| Gate Threshold Voltage VGS(th) Typical | β | 2.0 V |
| Technology | β | OptiMOS 6 |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Qualification | β | Automotive grade |
| Packaging | β | Tape & Reel (TMA1) |