BSZ070N08LS5ATMA1 vs IAUZ40N08S5N100ATMA1 Comparison
Detailed side-by-side comparison of BSZ070N08LS5ATMA1 by Infineon and IAUZ40N08S5N100ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveInfineon
IAUZ40N08S5N100ATMA1
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ070N08LS5ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOSβ’ 5 (80 V logic-level) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | β |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΞ© | β |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| Power Dissition PD max at TC | 69 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TDSON-8 (S3O8) 3.3 Γ 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020, unleaded reflow) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Reel Quantity | 5000 per 13-inch reel (T&R) | β |
| Technology | β | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 40 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 68 W |
| On-Resistance RDS(on) max | β | 10 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | β | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | β | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | β | Β±20 V |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Channel Type | β | N-Channel |