BSZ096N10LS5ATMA1 vs BSZ130N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSZ096N10LS5ATMA1 by Infineon and BSZ130N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveInfineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ096N10LS5ATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS max) | 100 V | β |
| Gate-Source Voltage (VGS max) | 20 V (typical) | β |
| Continuous Drain Current (ID, TC=25 Β°C) | 40 A | β |
| Maximum Silicon Drain Current (ID max) | 62 A | β |
| Pulse Drain Current (ID,pulse) | 160 A | β |
| On-Resistance RDS(on) max | 9.6 mΞ© at VGS=10 V | β |
| Total Power Dissipation (Ptot, TC=25 Β°C) | 69 W | β |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | β |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 Β°C) | β |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | -55 C to +150 C (junction) |
| Technology | OptiMOS 5 trench MOSFET | β |
| Gate Drive | Logic-level compatible | β |
| ESD Protection | Yes (gate-integrated) | β |
| RoHS Status | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | β |
| Part Family | β | OptiMOS 25V / 30V |
| Polarity / Channel Type | β | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Ta=25 C) | β | 10 A |
| Continuous Drain Current (Tc=25 C) | β | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | β | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | β | 2.2 V |
| Power Dissipation (Ta) | β | 2.1 W |
| Power Dissipation (Tc) | β | 25 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial / Commercial (non-automotive) |