BSZ096N10LS5ATMA1 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of BSZ096N10LS5ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveInfineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ096N10LS5ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $2.05 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS max) | 100 V | β |
| Gate-Source Voltage (VGS max) | 20 V (typical) | β |
| Continuous Drain Current (ID, TC=25 Β°C) | 40 A | β |
| Maximum Silicon Drain Current (ID max) | 62 A | β |
| Pulse Drain Current (ID,pulse) | 160 A | β |
| On-Resistance RDS(on) max | 9.6 mΞ© at VGS=10 V | β |
| Total Power Dissipation (Ptot, TC=25 Β°C) | 69 W | β |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | β |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 Β°C) | β |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | β |
| Technology | OptiMOS 5 trench MOSFET | OptiMOSβ’ 7 (trench MOSFET) |
| Gate Drive | Logic-level compatible | β |
| ESD Protection | Yes (gate-integrated) | β |
| RoHS Status | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Qualification | β | AEC-Q101 (Automotive) |