BSZ130N03LSGATMA1 vs BSC019N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and BSC019N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSZ130N03LSGATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.58 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 25V / 30V | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Ta=25 C) | 10 A | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 25 W | β |
| Package | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TDSON-8-1 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial / Commercial (non-automotive) | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | β | 2.5 mΞ© |
| RDS(on) typ at VGS=10V | β | 1.9 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Power Dissipation (PD) at TC=25C | β | 125 W |