BSZ130N03LSGATMA1 vs BSC023N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β ActiveInfineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | BSZ130N03LSGATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Ta=25 C) | 10 A | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 25 W | β |
| Package | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial / Commercial (non-automotive) | β |
| Part Number | β | BSC023N08NS5SCATMA1 |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 202 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 188 W |
| On-State Resistance RDS(on) typ. | β | 2.3 mΞ© at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | β | 3.8 V |
| Total Gate Charge Qg | β | 98 nC at VGS=10 V |
| Input Capacitance Ciss | β | 6.8 nF |
| Output Capacitance Coss | β | 74 pF |
| Thermal Resistance RthJC | β | 0.72 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |