BSZ130N03LSGATMA1 vs BSZ150N10LS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and BSZ150N10LS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β ActiveInfineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ130N03LSGATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Ta=25 C) | 10 A | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 25 W | β |
| Package | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial / Commercial (non-automotive) | β |
| Part Number | β | BSZ150N10LS3GATMA1 |
| Technology / Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25 Β°C) | β | 40 A |
| On-Resistance RDS(on) max | β | 15 mΞ© |
| Power Dissipation (TA=25 Β°C) | β | 2.1 W |
| Power Dissipation (TC=25 Β°C) | β | 63 W |
| Operating Temperature Range (TJ) | β | -55 Β°C to +150 Β°C |
| Gate Threshold VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | β | Yes (lead-free, 260 Β°C peak reflow compatible) |