BSZ150N10LS3GATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveInfineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ150N10LS3GATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | β |
| Technology / Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25 Β°C) | 40 A | β |
| On-Resistance RDS(on) max | 15 mΞ© | β |
| Power Dissipation (TA=25 Β°C) | 2.1 W | β |
| Power Dissipation (TC=25 Β°C) | 63 W | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 Β°C to +150 Β°C | β |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant with exemption |
| Lead-Free / Reflow | Yes (lead-free, 260 Β°C peak reflow compatible) | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| Automotive Qualified | β | Yes (AEC-Q101) |