BSZ150N10LS3GATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveInfineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ150N10LS3GATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ150N10LS3GATMA1 | β |
| Technology / Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc=25 Β°C) | 40 A | β |
| On-Resistance RDS(on) max | 15 mΞ© | β |
| Power Dissipation (TA=25 Β°C) | 2.1 W | β |
| Power Dissipation (TC=25 Β°C) | 63 W | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 Β°C to +150 Β°C | β |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 Β°C peak reflow compatible) | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Technology | β | OptiMOS 5 (logic-level) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Operating Temperature Range | β | -55 C to +150 C (TJ max) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |