BSZ150N10LS3GATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ150N10LS3GATMA1

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 βœ“ Active
Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ150N10LS3GATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.42
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 β€”
Technology / Family OptiMOS 3 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID, Tc=25 Β°C) 40 A β€”
On-Resistance RDS(on) max 15 mΞ© β€”
Power Dissipation (TA=25 Β°C) 2.1 W β€”
Power Dissipation (TC=25 Β°C) 63 W β€”
Package PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 Β°C to +150 Β°C β€”
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 Β°C peak reflow compatible) β€”
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] 1 (Unlimited)
Product Family β€” OptiMOS 25V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 16 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
Power Dissipation (PD) at TA=25C β€” 2.1 W
Power Dissipation (PD) at TC=25C β€” 37 W
Configuration β€” Single
Operating Temperature Range β€” -55C to +150C
Lead-Free β€” Yes
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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