BSZ15DC02KDHXTMA1 vs IRF4905SPBF Comparison
Detailed side-by-side comparison of BSZ15DC02KDHXTMA1 by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ15DC02KDHXTMA1
BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon
BSZ15DC02KDHXTMA1 β Active
Specification Comparison
| Parameter | BSZ15DC02KDHXTMA1 | IRF4905SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.18 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ15DC02KDHXTMA1 | β |
| Transistor Type | N-Channel + P-Channel (complementary pair) | β |
| Technology | OptiMOSβ’2 (N-ch) + OptiMOSβ’-P2 (P-ch) | HEXFET, planar cell |
| Drain-to-Source Voltage (VDS) Max | 20 V | β |
| N-Channel Continuous Drain Current (ID) | 5.1 A | β |
| P-Channel Continuous Drain Current (ID) | 3.2 A | β |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | β |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | β |
| Gate Drive Level | Super Logic level, 2.5 V rated | β |
| Configuration | Common drain (back-to-back source pair) | β |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +150 C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | D2PAK (TO-263) surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Lead-Free / RoHS | Yes / RoHS compliant | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID, Tc=25C) | β | -42 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | β | 20 mOhm @ VGS = -10V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | β | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | β | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Total Gate Charge (Qg) | β | 120 nC (typical per Mouser listing) |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| RoHS Status | β | Compliant (PBF suffix indicates Pb-free) |
| Qualification | β | JEDEC standard |