BSZ180P03NS3EGATMA1 vs BSZ15DC02KDHXTMA1 Comparison

Detailed side-by-side comparison of BSZ180P03NS3EGATMA1 by Infineon and BSZ15DC02KDHXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon

BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon

BSZ180P03NS3EGATMA1 βœ“ Active
Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 βœ“ Active

Specification Comparison

Parameter BSZ180P03NS3EGATMA1 BSZ15DC02KDHXTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.45 $0.74
Transistor Type P-Channel MOSFET N-Channel + P-Channel (complementary pair)
Technology OptiMOS P3 OptiMOSβ„’2 (N-ch) + OptiMOSβ„’-P2 (P-ch)
Drain-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) - Ta 9 A β€”
Continuous Drain Current (ID) - Tc 39.5 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-State Resistance (RDS(on)) max 18 mΞ© @ VGS = -10 V β€”
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Gate Charge (QG) total [DATA_NEEDED: QG total] β€”
Power Dissipation (Ta) 2.1 W β€”
Power Dissipation (Tc) 40 W β€”
Operating Temperature Range -55Β°C to +150Β°C (TJ) β€”
Package PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
MSL Level 1 β€”
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSZ15DC02KDHXTMA1
Drain-to-Source Voltage (VDS) Max β€” 20 V
N-Channel Continuous Drain Current (ID) β€” 5.1 A
P-Channel Continuous Drain Current (ID) β€” 3.2 A
N-Channel RDS(on) Max β€” [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max β€” 55 mOhm (per Infineon part summary)
Gate Drive Level β€” Super Logic level, 2.5 V rated
Configuration β€” Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) β€” 2.5 W @ 25 C (per DigiKey listing)
Operating Junction Temperature β€” -55 C to +175 C
Avalanche Rated β€” Yes
Automotive Qualification β€” AEC-Q101 qualified
Lead-Free / RoHS β€” Yes / RoHS compliant

Datasheets & Resources

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