BSZ900N20NS3GATMA1 vs BSC060N10NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ900N20NS3GATMA1 by Infineon and BSC060N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ900N20NS3GATMA1
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β ActiveInfineon
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
BSC060N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ900N20NS3GATMA1 | BSC060N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.78 |
| Part Number | BSZ900N20NS3GATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΞ© | β |
| Typical RDS(on) @ VGS=10V | 77 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD, Tc=25C) | 62.5 W | 125 W |
| Operating Junction Temperature | -55C to +150C | -55 C to +150 C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| ESD Protection | Yes (integrated) | β |
| Avalanche Energy Rated | Yes (EAS) | β |
| Part Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Ta) | β | 14.9 A |
| Continuous Drain Current (ID, Tc) | β | 90 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 6 mOhm |
| Gate Threshold Voltage VGS(th) | β | 2.0 V to 3.5 V |
| Lead-Free | β | Yes |
| Halogen-Free | β | [DATA_NEEDED: halogen status] |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg value] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss value] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS value] |