BSZ900N20NS3GATMA1 vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of BSZ900N20NS3GATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ900N20NS3GATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.48 |
| Part Number | BSZ900N20NS3GATMA1 | β |
| Manufacturer | Infineon Technologies | β |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΞ© | β |
| Typical RDS(on) @ VGS=10V | 77 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD, Tc=25C) | 62.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| ESD Protection | Yes (integrated) | β |
| Avalanche Energy Rated | Yes (EAS) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 63 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 30 W |
| RDS(on) max (typical reference) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ VGS=10V] |
| Operating Temperature Range | β | -55C to +150C (junction, typical) |
| Pin Count | β | 8 |