BTS724GXUMA1 vs BTS3405GXUMA1 Comparison
Detailed side-by-side comparison of BTS724GXUMA1 by Infineon and BTS3405GXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BTS724GXUMA1
BTS724GXUMA1 - 4-Ch High-Side Smart Power Switch 3A | Infineon
BTS724GXUMA1 β ActiveSpecification Comparison
| Parameter | BTS724GXUMA1 | BTS3405GXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.21 | $0.55 |
| Topology | 4-channel high-side switch | β |
| Number of Outputs | 4 | β |
| Output Configuration | High-side | β |
| On-Resistance (RDS(on)) per Channel | 200 mOhm typical at 25 C | β |
| Continuous Load Current per Channel | 3 A | β |
| Supply Voltage (Vbb) | 5.5 V to 38 V | β |
| Operating Supply Voltage Range | 5.5 V to 38 V | β |
| Overvoltage Clamp (Vbb(AZ)) | Data needed - see datasheet | β |
| Standby Current | 8 mA typical (per datasheet family) | β |
| Input Type | CMOS-compatible, ground-referenced | β |
| Diagnostic Output | Yes - per-channel status flag | β |
| Protection Features | Overload, short-circuit, over-temperature, over-voltage | Overcurrent, Short-Circuit, Over-Temperature, Over-Voltage |
| Demagnetization | Fast demagnetization for inductive loads | β |
| Operating Temperature Range | -40 C to +150 C junction | -40 Β°C to +150 Β°C |
| Package | PG-DSO-20 (20-pin, exposed thermal considerations) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Technology | Infineon Smart SIPMOS (vertical power MOSFET + charge pump) | β |
| Family | Classic PROFET 24V automotive smart high-side switch | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | HITFET (Classic) |
| Function | β | Dual-channel low-side power switch |
| Number of Channels | β | 2 (independent) |
| Switch Type | β | N-Channel MOSFET (low-side) |
| Continuous Output Current | β | 350 mA per channel |
| On-State Resistance (Rds_on) | β | 0.9 Ξ© (max) |
| Maximum Drain Voltage | β | 42 V |
| Input Logic Compatibility | β | CMOS/TTL logic-level |
| Package Type | β | PG-DSO-8 (8-pin SOIC) |