BUF634AIDDAR vs BUF634P Comparison
Detailed side-by-side comparison of BUF634AIDDAR by Texas Instruments and BUF634P by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
BUF634AIDDAR - 210MHz 250mA High-Speed Buffer | Texas Instruments
BUF634AIDDAR β ActiveSpecification Comparison
| Parameter | BUF634AIDDAR | BUF634P |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Amplifier ICs | Amplifier ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.15 | $5.40 |
| Bandwidth | 35 MHz to 210 MHz (pin-selected) | β |
| Output Current | 250 mA | 250 mA |
| Slew Rate | 3750 V/us | 2000 V/us |
| Quiescent Current | 1.5 mA (35 MHz BW setting) | 1.5 mA (30 MHz BW mode) |
| Supply Voltage Range | +/-2.25 V to +/-18 V | +/-2.25 V to +/-18 V |
| Total Supply Voltage | 4.5 V to 36 V | β |
| Architecture | Open-loop buffer, unity gain | β |
| Number of Channels | 1 | 1 |
| Protection Features | Internal output current limit, thermal shutdown | Internal current limit, thermal shutdown |
| Package | SOIC-8 PowerPad (DDA) | 8-PDIP (P) |
| Mounting Type | Surface Mount | Through Hole |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Operating Current at Full BW | [DATA_NEEDED: quiescent current at 210 MHz BW setting] | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tape & Reel (R suffix) | β |
| Configuration | Standalone open-loop driver or inside op amp feedback loop | β |
| Function | β | High-speed unity-gain buffer |
| Bandwidth (pin-selected) | β | 180 MHz (BW to V+) / 30 MHz (BW open) |
| Gain | β | 1 V/V (unity, open-loop buffer) |
| Input Offset Voltage | β | [DATA_NEEDED: input offset voltage] |
| Output Resistance | β | [DATA_NEEDED: output resistance] |
| Upgrade Path | β | BUF634A (higher slew 3750 V/us, 210 MHz BW, 8.5 mA IQ) |