BUF634AIDR vs BUF634P Comparison
Detailed side-by-side comparison of BUF634AIDR by Texas Instruments and BUF634P by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
BUF634AIDR - 210MHz, 250mA High-Speed Buffer | Texas Instruments
BUF634AIDR β Active
Specification Comparison
| Parameter | BUF634AIDR | BUF634P |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Amplifier ICs | Amplifier ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.56 | $5.40 |
| Function | High-speed open-loop buffer amplifier | High-speed unity-gain buffer |
| Supply Voltage Rating | 36 V | β |
| Output Current | 250 mA | 250 mA |
| Bandwidth | 35 MHz to 210 MHz (adjustable via BW pin) | β |
| Bandwidth Adjustment Method | External resistor between V- and BW pins | β |
| Number of Channels | 1 | 1 |
| Output Architecture | Push-Pull | β |
| Package | 8-SOIC (0.154 in, 3.90 mm width) | 8-PDIP (P) |
| Mounting Type | Surface Mount | Through Hole |
| Slew Rate | [DATA_NEEDED: slew rate] | 2000 V/us |
| Quiescent Current | [DATA_NEEDED: quiescent current] | 1.5 mA (30 MHz BW mode) |
| Input Offset Voltage | [DATA_NEEDED: input offset voltage] | [DATA_NEEDED: input offset voltage] |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes (Pbfree code: Yes) | β |
| Part Life Cycle Code | Active | β |
| Bandwidth (pin-selected) | β | 180 MHz (BW to V+) / 30 MHz (BW open) |
| Supply Voltage Range | β | +/-2.25 V to +/-18 V |
| Gain | β | 1 V/V (unity, open-loop buffer) |
| Protection Features | β | Internal current limit, thermal shutdown |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |
| Output Resistance | β | [DATA_NEEDED: output resistance] |
| Upgrade Path | β | BUF634A (higher slew 3750 V/us, 210 MHz BW, 8.5 mA IQ) |