EP2S130F1020C3 vs EP2S130F1020I4 Comparison
Detailed side-by-side comparison of EP2S130F1020C3 by Intel and EP2S130F1020I4 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP2S130F1020C3 | EP2S130F1020I4 |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Nrnd | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1,295.00 | $1,395.00 |
| Series | Stratix II | β |
| Family | Stratix II | Stratix II |
| Logic Elements / Cells | 132,540 | β |
| Logic Array Blocks (LABs) | 6,627 | β |
| User I/Os | 742 | β |
| Embedded Memory (TriMatrix) | [DATA_NEEDED: total Mbits] | β |
| DSP / Multiplier Blocks | [DATA_NEEDED: DSP block count] | β |
| Transceivers | Logic-rich SKU (no transceiver; transceiver variants use different suffix) | β |
| Maximum Internal Frequency | 778.82 MHz (per family datasheet) | β |
| Process Technology | 90 nm | β |
| Core Supply Voltage (VCCINT) | 1.15 V to 1.25 V | β |
| Package / Case | 1020-BBGA (FC-FBGA), 33x33 mm | β |
| Supplier Device Package | 1020-FBGA (33x33) | β |
| Mounting Type | Surface Mount | Surface Mount (FC-FBGA) |
| Operating Temperature | 0C to +85C (commercial, 'C' speed grade) | β |
| Speed Grade | C3 (commercial, -3 speed) | I (industrial performance) |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (per distributor listings) |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Logic Elements | β | 132,540 |
| Equivalent LEs | β | ~180,000 |
| Adaptive Logic Modules (ALMs) | β | 53,016 |
| Embedded Memory (bits) | β | 6,747,840 |
| Embedded Memory (M512 blocks) | β | 530 |
| Embedded Memory (M4K blocks) | β | 768 |
| Embedded Memory (M-RAM blocks) | β | 4 |
| Embedded 18x18 Multipliers | β | 504 |
| DSP Blocks | β | 48 |
| User I/O Pins | β | 742 |
| User I/O Banks | β | 12 |
| Package | β | 1020-ball FC-FBGA (33x33 mm) |
| Process Node | β | 90 nm CMOS, all-layer copper |
| Core Voltage (VCCINT) | β | 1.2 V |
| Device Revision | β | 4 |
| Operating Junction Temperature | β | -40C to +100C (industrial) |
| Configuration Scheme | β | Fast Passive Parallel x8, Passive Serial, JTAG |