EPF10K30ETC144-3 vs EPF10K30ETC144-3N Comparison
Detailed side-by-side comparison of EPF10K30ETC144-3 by Altera and EPF10K30ETC144-3N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Altera
EPF10K30ETC144-3
EPF10K30ETC144-3 - 30K FLEX 10KE FPGA, 144-LQFP | Altera/Intel
EPF10K30ETC144-3 β ActiveIntel
EPF10K30ETC144-3N
EPF10K30ETC144-3N - 30K-Gate FLEX 10KE FPGA, 144-TQFP | Intel
EPF10K30ETC144-3N NrndSpecification Comparison
| Parameter | EPF10K30ETC144-3 | EPF10K30ETC144-3N |
|---|---|---|
| Brand | Altera | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.20 | $26.75 |
| Manufacturer | Altera (now Intel) | β |
| Series | FLEX 10KE | β |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 1728 | 1,728 |
| Typical Gates | 30,000 | 30,000 |
| Embedded Memory (bits) | 24,576 | β |
| Embedded Array Blocks (EABs) | 13 | β |
| Logic Array Blocks (LABs) | 216 | 216 |
| User I/O Count | 102 | β |
| Number of I/O Banks | 8 | β |
| Core Voltage | 2.5 V | β |
| I/O Standards Supported | LVTTL, LVCMOS, PCI (via MultiVolt) | β |
| Speed Grade | -3 | β |
| Max Internal Frequency | 200 MHz | β |
| Process Technology | 0.22 Β΅m CMOS SRAM | β |
| Package | 144-pin LQFP (TQFP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature (Commercial) | 0 Β°C to +70 Β°C | β |
| Configuration Mode | Passive Serial / Active Serial / JTAG | β |
| Configuration Voltage | 5.0 V (EPC) / 2.5 V (core) | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | [DATA_NEEDED: lead-free reflow compatibility] | β |
| Logic Family | β | CMOS |
| Embedded Memory Bits | β | 24,576 |
| User I/Os | β | 102 |
| Number of Pins | β | 144 |
| Package Type | β | TQFP-144 (22 Γ 22 mm, 0.5 mm pitch) |
| Package Code | β | LFQFP |
| Terminal Form | β | Gull Wing |
| Technology | β | 0.22 Β΅m CMOS, SRAM-based |
| Core Supply Voltage (VCCINT) | β | 2.5 V |
| Operating Temperature | β | 0 Β°C to 70 Β°C (Commercial) |
| Propagation Delay | β | 0.6 ns (typical) |
| Internal Frequency | β | [DATA_NEEDED: internal frequency max] |
| Programming Method | β | JTAG (IEEE 1149.1), in-system SRAM configuration |
| Configuration Memory | β | Volatile SRAM (requires external configuration device) |