FDP030N06 vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of FDP030N06 by onsemi and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDP030N06 IRFZ44NPBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.89 $0.65
FET Type N-Channel MOSFET N-Channel
Technology PowerTrench (Trench) HEXFET (Advanced Process)
Drain to Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) @ 25C 120 A (Tc) β€”
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) β€”
RDS(on) Max @ Id, Vgs 3.2 mOhm β€”
RDS(on) Typ 2.6 mOhm β€”
Power Dissipation (Tc) 231 W (Tc) β€”
Gate Drive Type Standard level gate drive β€”
Switching Speed Fast β€”
Gate Input Resistance Low gate input resistance (low gate charge) β€”
Avalanche Test 100% avalanche tested β€”
Package TO-220-3 (3+Tab) TO-220AB (3-pin + tab)
Mounting Type Through Hole Through Hole
Packing Tube β€”
Typical Applications Power supply, switching applications β€”
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Total Gate Charge (Qg) β€” 42 nC
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Operating Junction Temperature β€” -55C to +175C
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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