IAUC100N04S6L014ATMA1 vs IAUC64N08S5L075ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L014ATMA1 by Infineon and IAUC64N08S5L075ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 β ActiveInfineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L014ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | β |
| Power Dissipation (P_D, Tc) | 100 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | β |
| Technology | OptiMOS 6 | OptiMOSβ’ 5 |
| RoHS Status | Compliant | β |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | β |
| Part Number | β | IAUC64N08S5L075ATMA1 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 7.5 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25Β°C | β | 75 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant |
| Number of Pins | β | 8 |