IAUC100N04S6L020ATMA1 vs BSC100N10NSFGATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6L020ATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 βœ“ Active
Infineon
BSC100N10NSFGATMA1

BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon

BSC100N10NSFGATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6L020ATMA1 BSC100N10NSFGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $1.49
FET Type N-Channel N-Channel
Drain-Source Breakdown Voltage V(BR)DSS 40 V β€”
Continuous Drain Current (Tc) 100 A β€”
Power Dissipation (Tc) 75 W β€”
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΞ© β€”
RDS(on) Typical 2.0 mΞ© β€”
Gate-Source Voltage VGS (max) Β±20 V β€”
Gate Threshold Voltage VGS(th) Typical 2.0 V β€”
Technology OptiMOS 6 MOSFET (Metal Oxide)
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55C to +150C (junction)
Package PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Qualification Automotive grade β€”
Packaging Tape & Reel (TMA1) β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID), Ta β€” 11.4 A
Continuous Drain Current (ID), Tc β€” 90 A
Power Dissipation (PD), Tc β€” 156 W
Drain-Source On-Resistance (RDS(on)) max β€” 10 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Gate Drive Voltage (recommended) β€” 10 V (for rated RDS(on))

Datasheets & Resources

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