IAUC100N04S6L020ATMA1 vs IAUC100N04S6L014ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L020ATMA1 by Infineon and IAUC100N04S6L014ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L020ATMA1
IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 β ActiveInfineon
IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L020ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.72 |
| FET Type | N-Channel | β |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | β |
| Continuous Drain Current (Tc) | 100 A | β |
| Power Dissipation (Tc) | 75 W | β |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΞ© | β |
| RDS(on) Typical | 2.0 mΞ© | β |
| Gate-Source Voltage VGS (max) | Β±20 V | β |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | β |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C |
| Package | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive grade | β |
| Packaging | Tape & Reel (TMA1) | Tape & Reel (ATMA1 suffix) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | IAUC / OptiMOS 6 40V |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | β | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | β | 100 W |
| AEC-Q101 Qualification | β | Yes |
| MSL Level | β | 1 |